周琦
-
教授
博士生导师
- 性别：男
- 毕业院校：香港科技大学
- 学历：博士研究生毕业
- 学位：哲学博士学位
- 在职信息：在职人员
- 所在单位：集成电路科学与工程学院（示范性微电子学院）
- 职务 : Porfessor
- 学科：微电子学与固体电子学
- 曾获荣誉：中国电子学会优秀科技工作者（2017）
四川省电子学会“电子科学技术奖”一等奖（2015）
访问量 ：
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[1]
Kuangli Chen
,
Rong Peng
,
Shuting Huang
,
Long Wang
,
Jianggen Zhu
,
Enchuan Duan
,
Bo Zhang
,
and Qi Zhou
,
Surge Current Capability and Failure Modes of 650 V p-GaN Gate HEMTs: A Multiphysics Study on Thermal–Electrical Coupling Effects, Electronics, vol. 14, no. 7, Mar 2025.
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[2]
Study of the Short-Circuit Capability and Device Instability of p-GaN Gate HEMTs by Repetitive Short-Circuit Stress, lEEE Transactions on Power Electronics, vol. 39, no. 2, pp. 2247-2257,
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[3]
A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor FieldEffect Transistor with a Buried Back Gate for Gallium Nitride SingleChip Complementary Logic Circuits, Electronics, vol. 13, no. 4, Feb 2024.
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[4]
Total-Ionizing-Dose Radiation Effect on Dynamic Threshold Voltage in p-GaN Gate HEMTs, IEEE Transactions on Electron Devices, vol. 70, no. 8, pp. 4081-4086,
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[5]
High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility, J.Semicond, vol. 44, no. 8,
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[6]
Double-Phase Adaptive Neural Network for Condition-Based Monitoring of p-GaN HEMT Under Repetitive Short-Circuit Stresses, IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREIMIENT, vol. 72, pp. 1-11,
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[7]
The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique, IEEE Transactions on Electron Devices, vol. 69, no. 10, pp. 5496-5502,
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[8]
A novel E-mode GaN p-MOSFET featuring charge storage layer with high current density, 2022 J. Phys. D: Appl. Phys,
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[9]
The Modulation Effect of LPCVD-SixNy Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure, IEEE Transactions on Electron Devices, vol. 69, no. 9, pp. 4828-4834, Sep 2022.
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[10]
自热效应下 P-GaN HEMT 的國值漂移机理， 电子与封装， vol. 22， no. 6， Mar 2022.
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[11]
重复短路应力下p-GaN HEMT器件的阈值电压， 电子与封装， vol. 22， no. 6， Mar 2022.
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[12]
A Novel Trench-Gated Vertical GaN Transistor With Dual-Current-Aperture by Electric-Field Engineering for High Breakdown Voltage, IEEE Transactions on Electron Devices, vol. 69, no. 3, pp. 1219-1225, Mar 2022.
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[13]
Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range, Materials, Mar 2022.
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[14]
Device Instability in the Third Quadrant of Schottky-Type p-GaN Gate HEMTs: The Hole Deficiency & Trapping Effect, 2024 1EEE 17th Intermational Conference on Solid-State and Integrated Circuit Techmology(ICSICT), Oct 2024.
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[15]
The non-monotonic instability of VTH and Rds,on in P-GaN Gate HEMTs Under Repetitive Short Circuit Stress: The role of electric-field & self heating effect, 2024 1EEE 17th International Conference on Solid-State and Integrated Circuit Technology(ICSICT), Oct 2024.
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[16]
The UIS Withstand Capability and Device Failure Mechanism of 650 V p-GaN Gate HEMTs, 2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology(ICSICT), Oct 2024.
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[17]
Threshold voltage instability of p-GaN gate HEMT in 48-12V buck converter & its impact on circuit power loss variation, 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024.
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[18]
A Novel E-mode GaN p-MISFET with Hole Compensation Effect Achieving High Drain Current and Ultra-Low Subthreshold Slope, 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024.
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[19]
Trap Dynamic Detection of GaN HEMT under Repetitive Short Circuit Degradation, 2023 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), May 2023.
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[20]
PSO-based Volterra Tensor Network for Predicting Short Circuit Degradation of p-GaN HEMT, 2023 IEEE 16th International Conference on Electronic Measurement & Instruments (ICEMI), Aug 2023.
